Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique

A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2 that are used to trap threading dislocations from the lattice mismatch. Spin-on doping was used to form the n-type junction and a controlled alloyed reaction of Al and Ge forms the p-type junction. At an alloy temperature of 5808C for 1 s, the Ge-on-Si diodes were found to have a ...

High-k Al2O3 MOS Structures with Si Interface Control Layer Formed on Air-Exposed GaAs and InGaAs Wafers

INFLUENCE OF FIBER ASPECT RATIO ON SHEAR CAPACITY OF DEEP BEAMS USING ARTIFICIAL NEURAL NETWORK TECHNIQUE

This paper deals with the effect of fiber aspect ratio of steel fibers on shear strength of steel fiber reinforced concrete deep beams loaded with shear span to depth ratio less than two using the artificial neural network technique. The network model predicts reasonably good results when compared with the equation proposed by previous researchers. The parametric study invol...

the impact of using inspirational quotes on abstract vocabulary recall

the present study is an attempt to investigate the potential impact of inspirational quotes on improving english abstract vocabulary recall. to achieve this goal, a multiple choice language proficiency test of 60 items including vocabulary and grammar component was administered to a sample of 63 second-semester male and female students whose age ranged between 17 to 22 and they were studying en...

High Aspect Ratio Si Etching in STS2

Deep reactive ion etching (DRIE) is one of the most important etching techniques because it is independent of crystal orientation and does not require any wet process. DRIE can be applied for many applications. For examples, this technique can be used to fabricate MEMS devices (e.g. accelerometers, scanners, etc.), microfluidic devices, electrical through wafer interconnects, and so on. In many...